Characterization of Si3N4/Si(111) thin films by reflectance difference spectroscopy-Reference-Cited by-同舟云学术

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Characterization of Si3N4/Si(111) thin films by reflectance difference spectroscopy

Published:2015-01-14 Issue:2 Volume:54 Page:021501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lastras-Martínez Luis Felipe,Ulloa-Castillo Nicolás Antonio,Herrera-Jasso Rafael,Balderas-Navarro Raúl Eduardo,Lastras-Martínez Alfonso,Pandikunta Mahesh,Ledyaev Oleg,Kuryatkov Vladimir,Nikishin Sergey

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=2/a=021501/pdf

Reference31 articles.

1. A review of GaN-based optoelectronic devices on silicon substrate

2. Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

3. High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia

4. High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

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1. Data reduction for spatially resolved reflectance anisotropy spectrometer;Review of Scientific Instruments;2023-10-01

2. Optical detection of graphene nanoribbons synthesized on stepped SiC surfaces;Journal of Applied Physics;2017-07-21

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