Study on the effect of heat treatment conditions on metalorganic-chemical-vapor-deposited ferroelectric Hf0.5Zr0.5O2thin film on Ir electrode-Reference-Cited by-同舟云学术

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Study on the effect of heat treatment conditions on metalorganic-chemical-vapor-deposited ferroelectric Hf0.5Zr0.5O2thin film on Ir electrode

Published:2014-09-01 Issue:9S Volume:53 Page:09PA04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shimizu Takao,Yokouchi Tatsuhiko,Shiraishi Takahisa,Oikawa Takahiro,Krishnan P. S. Sankara Rama,Funakubo Hioshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=9S/a=09PA04/pdf

Reference31 articles.

1. Current status and challenges of ferroelectric memory devices

2. Ferroelectric thin films: Review of materials, properties, and applications

3. Ferroelectric thin films for micro-sensors and actuators: a review

4. Ferroelectricity in hafnium oxide thin films

5. High-k dielectrics for future generation memory devices (Invited Paper)

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3. Contribution of oxygen vacancies to phase transition and ferroelectricity of Al:HfO₂ films;Nanotechnology;2024-06-27

4. Understanding phase evolution of ferroelectric Hf_0.5Zr_0.5O₂ thin films with Al₂O₃ and Y₂O₃ inserted layers;Journal of Materials Chemistry C;2024

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