Determination of Aluminium Mole Fraction in AlGaN Layers of GaN-Capped AlGaN/GaN Heteroepitaxial Wafers by Ultraviolet Reflection
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference5 articles.
1. Photoluminescence Investigations of AlGaN on GaN Epitaxial Films
2. A simple reflectance method for estimation of the Al mole fraction of bulk AlGaN and AlGaN/GaN heterostructures
3. Studies on the Influences ofi-GaN,n-GaN,p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
4. Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement
5. Gallium nitride surface quantum wells
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2. Uniform growth of III-nitrides on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor;physica status solidi (a);2016-02-22
3. Damage characteristics of n-GaN thin film surfaces etched by ultraviolet light-assisted helium plasmas;Thin Solid Films;2014-11
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