Highly Uniform Electroluminescence from 150 and 200 mm GaN-on-Si-Based Blue Light-Emitting Diode Wafers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/6/i=9/a=095502/pdf
Reference15 articles.
1. LED Cost and Performance: How to Enable Massive Adoption in General Lighting
2. 200-mm GaN-on-Si Based Blue Light-Emitting Diode Wafer with High Emission Uniformity
3. Highly efficient InGaN/GaN blue LED on 8-inch Si (111) substrate
4. Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses
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