Author:
Yoon Ji-Young,Lee Myung-Hyun,Kim Younghee,Seo Won-Seon,Shul Yong-Gun,Lee Won-Jae,Jeong Seong-Min
Funder
Ministry of Trade, Industry and Energy
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
5 articles.
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1. Computational Analysis of SiC Crystal Growth from Silicon Melt Diluted with Cr, Fe, Co, Ni, Y, Al, La, Ce, Pr, Nd, and Sc. Part 1;Reviews on Advanced Materials and Technologies;2024
2. Review of solution growth techniques for 4H-SiC single crystal;China Foundry;2023-03
3. Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth;CrystEngComm;2021
4. Bayesian optimization for a high- and uniform-crystal growth rate in the top-seeded solution growth process of silicon carbide under applied magnetic field and seed rotation;Journal of Crystal Growth;2020-02
5. Residual stress analysis of 4H-SiC crystals obtained by a top-seeded solution growth method;CrystEngComm;2017