1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/8/i=5/a=054101/pdf
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1. High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
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3. 8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation
4. Blocking-voltage boosting technology for GaN transistors by widening depletion layer in Si substrates
5. Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- $\mu\hbox{m}$ Buffer Thickness by Local Substrate Removal
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