Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency f T of 310 GHz
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://iopscience.iop.org/article/10.7567/1882-0786/ab56e2/pdf
Reference35 articles.
1. GaN Power Transistors on Si Substrates for Switching Applications
2. Low-Noise Microwave Performance of AlN/GaN HEMTs Grown on Silicon Substrate
3. AlGaN/GaN-heterostructures on (111) 3C-SiC/Si pseudo substrates for high frequency applications
4. High-Frequency Performance of GaN High-Electron Mobility Transistors on 3C-SiC/Si Substrates With Au-Free Ohmic Contacts
5. 150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon
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1. High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz;Science China Information Sciences;2024-05-23
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