Energetics and electronic structure of native point defects in α-Ga2O3
Author:
Funder
Japan Society for the Promotion of Science
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://iopscience.iop.org/article/10.7567/1882-0786/ab3763/pdf
Reference55 articles.
1. A review of Ga2O3materials, processing, and devices
2. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
3. Wide-bandgap semiconductor materials: For their full bloom
4. Recent progress in Ga2O3power devices
5. $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates
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