High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO2Gate Dielectric-Reference-Cited by-同舟云学术

High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO2Gate Dielectric

Published:2011-04-01 Issue:4S Volume:50 Page:04DC17
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mitard Jerome,Jaeger Brice De,Eneman Geert,Dobbie Andrew,Myronov Maksym,Kobayashi Masaharu,Geypen Jef,Bender Hugo,Vincent Benjamin,Krom Raymond,Franco Jacopo,Winderickx Gillis,Vrancken Evi,Vanherle Wendy,Wang Wei-E.,Tseng Joshua,Loo Roger,Meyer Kristin De,Caymax Matty,Pantisano Luigi,Leadley David R.,Meuris Marc,Absil Philippe P.,Biesemans Serge,Hoffmann Thomas

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference15 articles.

1. PMOS Hole Mobility Enhancement Through SiGe Conductive Channel and Highly Compressive ILD- $\hbox{SiN}_{x}$ Stressing Layer

2. High Quality Strained Ge Epilayers on a Si[sub 0.2]Ge[sub 0.8]/Ge/Si(100) Global Strain-Tuning Platform

3. Reverse graded relaxed buffers for high Ge content SiGe virtual substrates

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