An Autonomously Controllable Plasma Etching System Based on Radical Monitoring-Reference-Cited by-同舟云学术

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An Autonomously Controllable Plasma Etching System Based on Radical Monitoring

Published:2012-07-01 Issue:7R Volume:51 Page:076502
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Takahashi Shunji,Kawauchi Ryota,Takashima Seigo,Den Shoji,Katagiri Toshiro,Kano Hiroyuki,Ohta Takayuki,Ito Masafumi,Suzuki Tatsuya,Takeda Keigo,Hori Masaru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference23 articles.

1. Progress of radical measurements in plasmas for semiconductor processing

2. Insights into sticking of radicals on surfaces for smart plasma nano-processing

3. Automatic control in microelectronics manufacturing: Practices, challenges, and possibilities

4. Principal Component Analysis of Optical Emission Spectroscopy and Mass Spectrometry: Application to Reactive Ion Etch Process Parameter Estimation Using Neural Networks

5. Process control based on quadrupole mass spectrometry

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