Thermodynamic analysis of (0001) and $(000\bar{1})$ GaN metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

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Thermodynamic analysis of (0001) and $(000\bar{1})$ GaN metalorganic vapor phase epitaxy

Published:2017-06-08 Issue:7 Volume:56 Page:070304
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kusaba Akira,Kangawa Yoshihiro,Kempisty Pawel,Valencia Hubert,Shiraishi Kenji,Kumagai Yoshinao,Kakimoto Koichi,Koukitu Akinori

Funder

Japan Society for the Promotion of Science

Japan Science and Technology Agency

Horizon 2020

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=7/a=070304/pdf

Reference20 articles.

1. Red to blue wavelength emission of N-polar $(000\bar{1})$ InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy

2. Optically pumped lasing properties of $(1\bar{1}01)$ InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates

3. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

4. A new theoretical approach to adsorption–desorption behavior of Ga on GaAs surfaces

5. Ab initio-based approach to structural change of compound semiconductor surfaces during MBE growth

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4. Investigation of V/III ratio dependencies for optimizing AlN growth during reduced parasitic reaction in metalorganic vapor phase epitaxy;Scientific Reports;2023-02-27

5. Long wavelength red to green emissions from {11 2¯ 2} semipolar multi-quantum wells on fully relaxed InGaN underlayer;Japanese Journal of Applied Physics;2022-11-14

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