Relation between crystallinity and constituent distribution of an IGZO thin film
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://iopscience.iop.org/article/10.7567/1347-4065/ab34fd/pdf
Reference29 articles.
1. Spinel, YbFe2O4, and Yb2Fe3O7 types of structures for compounds in the In2O3 and Sc2O3A2O3BO systems [A: Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn] at temperatures over 1000°C
2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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1. Low-Cost and High-Performance, Back-Channel Etched InGaZnO Thin Film Transistors by Spray Pyrolysis;IEEE Electron Device Letters;2023-10
2. Research progress on crystalline IGZO thin film transistor;Chinese Journal of Liquid Crystals and Displays;2023
3. Deposition, Characterization, and Performance of Spinel InGaZnO4;ACS Applied Electronic Materials;2022-02-23
4. Systematic Study on the Amorphous, C-Axis-Aligned Crystalline, and Protocrystalline Phases in In–Ga–Zn Oxide Thin-Film Transistors;ACS Applied Electronic Materials;2021-02-25
5. Image sensor with In-pixel calculation using crystalline IGZO FET in display;Japanese Journal of Applied Physics;2020-02-03
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