Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
2 articles.
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1. The Design of a 4H-SiC SGT MOSFET;2024 IEEE 4th International Conference on Power, Electronics and Computer Applications (ICPECA);2024-01-26
2. A 1200V-class Ultra-low Specific On-resistance SiC Lateral MOSFET with Double Trench Gate and VLD Technique;IEEE Journal of the Electron Devices Society;2021