Analysis of the change in the composition of the CdTe surface upon implantation of О_2^+ ions and subsequent annealing

Abstract

The methods of implantation of О_2^+ ions into a single-crystal CdTe/Mo(111) film followed by annealing at Т=800 K for 30 min resulted in the obtained CdTeO3 film. Ion implantation, heating, and investigation of the composition, density of state of valence electrons, and parameters of energy bands are carried out in the same ultra-high vacuum device (10-7 Pa). The surface morphology and crystal structure of the oxide are studied using standard scanning electron microscopy and high-speed electron diffraction setups. It has been established that in the valence band of the CdTeO3 film there is a 3rd maximum due to the excitation of electrons from 5s Cd electrons and 2p O electrons and bending 5s Cd + 2pO electrons. Based on the Eg data, it is concluded that quantum size effects are not detected in the case of CdTeO3 films with a thickness of ≥ 30 Å.