Hybrid low‐ k spacer scheme for advanced FinFET technology parasitic capacitance reduction-Reference-Cited by-同舟云学术

Hybrid low‐ k spacer scheme for advanced FinFET technology parasitic capacitance reduction

Published:2020-05 Issue:10 Volume:56 Page:514-516
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Gu M.¹^ORCID,Wang X.¹,Li W.¹,Aquilino M.¹,Peng J.¹,Wang H.¹,Jaeger D.¹,Tabakman K.¹,Carter R.¹,Hu O.¹,Ma W.¹,Joshi M.¹,Lee L.¹

Affiliation:

1. GLOBALFOUNDRIES Inc. USMaltaNew York12020USA

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2019.3954

Reference9 articles.

1. Performance optimization study of FinFETs considering parasitic capacitance and resistance;An T.;JSTS: J. Semicond. Technol. Sci.,2014

2. Investigation of parasitic resistance and capacitance effects in nanoscaled FinFETs and their impact on static random‐access memory cells;Huang B.R.;Jpn. J. Appl. Phys.,2017

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synthesis of low-k SiONC thin films by plasma-assisted molecular layer deposition with tetraisocyanatesilane and phloroglucinol;Nanotechnology;2024-07-18

2. The future of two-dimensional semiconductors beyond Moore’s law;Nature Nanotechnology;2024-07

3. Atomic layer etching of SiCO films with surface modification by O2 and CF4/NH3/Ar plasmas and desorption by IR annealing;Journal of Vacuum Science & Technology A;2024-06-07

4. Carbon‐Rich Plasma‐Deposited Silicon Oxycarbonitride Films Derived from 4‐(Trimethylsilyl)morpholine as a Novel Single‐Source Precursor;ChemPlusChem;2024-05-22

5. Spacer engineering on multi-channel FinFET for advanced wireless applications;AEU - International Journal of Electronics and Communications;2024-05