High performance laser with nanopatterned active layer by selective area epitaxy
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20052936?crawler=true&mimetype=application/pdf
Reference9 articles.
1. Selective area growth of InAs quantum dots formed on a patterned GaAs substrate
2. Dense uniform arrays of site-controlled quantum dots grown in inverted pyramids
3. Site-controlled InAs single quantum-dot structures on GaAs surfaces patterned by in situ electron-beam lithography
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1. Structural and optical characteristics of ∼ 1.65 μm-emitting quantum dots on InP substrate grown by selected area-MOVPE;Journal of Crystal Growth;2024-02
2. Selectively-Grown Quantum Dot Active Region Lasers;IEEE Journal of Quantum Electronics;2022-08
3. Impact of InGaAs carrier collection quantum well on the performance of InAs QD active region lasers fabricated by diblock copolymer lithography and selective area epitaxy;Semiconductor Science and Technology;2019-01-14
4. Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning;Journal of Crystal Growth;2017-05
5. Patterned semiconductor inverted quantum dot photonic devices;SPIE Proceedings;2016-03-03
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