Room‐temperature laser operation of a (Ga,In)As/Ga(As,Bi)/(Ga,In)As W‐type laser diode
Author:
Affiliation:
1. Materials Science Center and Department of Physics Philipps‐University Marburg Marburg Germany
2. NAsP III/V GmbH Marburg Germany
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/ell2.12353
Reference26 articles.
1. Carrier leakage and temperature dependence of InGaAsP lasers
2. The effect of temperature dependent processes on the performance of 1.5-μm compressively strained InGaAs(P) MQW semiconductor diode lasers
3. Characteristics of GaAsSb single-quantum-well-lasers emitting near 1.3 μm
4. Dilute bismides and related alloys
5. New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy
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