Al 0 .3 Ga 0.7 N PN diode with breakdown voltage >1600 V
Author:
Affiliation:
1. Sandia National LaboratoriesAlbuquerqueNM87185USA
2. Lehigh UniversityBethlehemPA18015USA
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2016.1280
Reference10 articles.
1. An assessment of wide bandgap semiconductors for power devices;Hudgins J.L.;Trans. Power Electron.,2003
2. High critical electric field exceeding 8 MV/cm measured using an AlGaN p‐i‐n vertical conducting diode on n‐SiC substrate;Nishikawa A.;Jpn. J. Appl. Phys.,2007
3. High‐temperature characteristics of Al x Ga1−x N‐based vertical conducting diodes;Nishikawa A.;Jpn. J. Appl. Phys.,2008
4. Low dislocation density AlGaN epilayers by epitaxial overgrowth of patterned templates
5. Influence of growth temperature of AlGaN multiquantum well point defect incorporation and photoluminescence efficiency;Armstrong A.;Appl. Phys. Lett.,2011
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