Affiliation:
1. Institute for Nano Quantum Information Electronics The University of Tokyo, 4‐6‐1 Komaba Meguro‐ku Tokyo Japan
2. Research Center for Advanced Science and Technology The University of Tokyo, 4‐6‐1 Komaba Meguro‐ku Tokyo Japan
Abstract
AbstractThis study investigates the development of InAs quantum dot (QD) lasers on a InP(001) substrate, utilizing only III‐arsenide layers. This approach avoids the issues associated with the use of phosphorus compounds, which are evident in the crystal growth of conventional C/L‐band QD lasers, making the manufacturing process safer, simpler, and more cost‐effective. The threshold current density of the fabricated QD laser was 633 A/cm2, which is the lowest value for QD lasers in the 1.6‐µm wavelength region. This result suggests a high cost‐effectiveness and paves the way towards a large‐scale production technology for high‐performing C/L/U‐band QD lasers.
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Cited by
3 articles.
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