Flip-chip bonded InAsSbP and InGaAs LEDs and detectors for the 3-[micro sign]m spectral region-Reference-Cited by-同舟云学术

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Flip-chip bonded InAsSbP and InGaAs LEDs and detectors for the 3-[micro sign]m spectral region

Published:2003 Issue:4 Volume:150 Page:356
ISSN:1350-2433
Container-title:IEE Proceedings - Optoelectronics
language:en
Short-container-title:IEE Proc., Optoelectron.

Author:

Matveev B.A.,Aydaraliev M.,Zotova N.V.,Karandashov S.A.,Il'inskaya N.D.,Remennyi M.A.,Stus' N.M.,Talalakin G.N.

Publisher

Institution of Engineering and Technology (IET)

Link

https://digital-library.theiet.org/content/journals/10.1049/ip-opt_20030537?crawler=true&mimetype=application/pdf

Reference15 articles.

1. Room-temperature InAsSb strained-layer superlattice light-emitting diodes at λ=4.2 μm with AlSb barriers for improved carrier confinement

2. HgCdTe photodetectors with negative luminescent efficiencies >80%

3. InAs and InAsSb LEDs with built-in cavities

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1. InAsSbP Photodiodes for 2.6–2.8-μm Wavelengths;Technical Physics;2018-02

2. 512 <inline-formula> <tex-math notation="LaTeX">$\times$</tex-math> </inline-formula> 512, 100 Hz Mid-Wave Infrared LED Microdisplay System;Journal of Display Technology;2016-10

3. High dimensional addressable LED arrays based on type I GaInAsSb quantum wells with quinternary AlGaInAsSb barriers;Semiconductor Science and Technology;2011-05-31

4. Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes;Semiconductors;2011-04

5. Properties of mid-IR diodes with n-InAsSbP/n-InAs interface;SPIE Proceedings;2010-02-11

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