Accumulation-Mode Normally Off Algan/Gan Mis-Hemt with 1.5 Gw/Cm-2 Figure of Merit
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Elsevier BV
Reference31 articles.
1. The analysis model of AlGaN/GaN HEMTs with electric field modulation effect;Luoyun Yang;IETE Technical Review,2019
2. Normally-Off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process;T Pu;IEEE Electron Device Letters,2019
3. High Breakdown (>1500 V) AlGaN/GaN HEMTs by Substrate-Transfer Technology;B Lu;IEEE Electron Device Letters,2010
4. High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaN p-i-n Vertical Conducting Diode on n-SiC Substrate;Atsushi ; Nishikawa;Journal of Applied Physics,2007
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