Optimization of the Cycle Numbers of Tio2 Resistive Random-Access Memory Devices by Annealing
Author:
Publisher
Elsevier BV
Subject
General Earth and Planetary Sciences,General Environmental Science
Reference45 articles.
1. Frontier development of chips design and production;Y Li;Procedia Comput. Sci,2018
2. Long-Lived Solid-State Optical Memory for High-Rate Quantum Repeaters;M F Askarani;Phys. Rev. Lett,2021
3. Design of RRAM with high storage capacity and high reliability for IoT applications;J Wang;Solid. State. Electron,2022
4. Switching characteristic of fabricated nonvolatile bipolar resistive switching memory (ReRAM) using PEDOT: PSS/GO;A Moazzeni;Solid. State. Electron,2022
5. Overview of Resistive Random Access Memory (RRAM): Materials, Filament Mechanisms, Performance Optimization, and Prospects;H Wang;Phys. Status Solidi -Rapid Res. Lett,2019
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