Ultrahigh Growth Rate-Induced Thick 3c-Sic Heteroepitaxial Layers on 4h-Sic and its Oxidation Characteristics
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Elsevier BV
Reference27 articles.
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2. Bias temperature instability in SiC metal oxide semiconductor devices;C Yang;Journal of Physics D-Applied Physics
3. A Review of Switching Slew Rate Control for Silicon Carbide Devices Using Active Gate Drivers;S Zhao;Ieee Journal of Emerging and Selected Topics in Power Electronics
4. A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues;H Lee;Ieee Journal of Emerging and Selected Topics in Power Electronics,2020
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