A search for asymmetry in the dissipation between the current entry and exit points in the quantum Hall regime of a silicon MOSFET-Reference-Cited by-同舟云学术

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A search for asymmetry in the dissipation between the current entry and exit points in the quantum Hall regime of a silicon MOSFET

Published:1992-04-01 Issue:4 Volume:7 Page:608-611
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Ouali F F,Challis L J,Cooper J

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/7/i=4/a=030/pdf

Reference13 articles.

1. Quantized magnetoresistance in two-dimensional electron systems

2. Power dissipation in the quantum Hall regime

3. Hall Effect in Silicon MOS Inversion Layers under Strong Magnetic Fields

4. Absence of backscattering in the quantum Hall effect in multiprobe conductors

5. Theory of contacts in a two-dimensional electron gas at high magnetic fields

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1. The electrical resistance of vacuum;European Journal of Physics;2013-05-07

2. Release of the Joule heat upon passage of the electric current in nanostructures (a review);Physics of the Solid State;2012-04

3. Spatial distribution of Joule heat in nanostructures;Journal of Physics: Condensed Matter;2006-11-21

4. Breakdown of the quantum Hall effect;Physica E: Low-dimensional Systems and Nanostructures;1999-04

5. Joule heat in point contacts;Physical Review B;1995-07-15

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