On Lattice Scattering in Homopolar Semiconductors
Author:
Publisher
IOP Publishing
Subject
General Medicine
Link
http://stacks.iop.org/0370-1298/68/i=8/a=303/pdf
Reference14 articles.
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2. Discussion of “An Improved Model for Analyzing Hole Mobility and Resistivity in p‐Type Silicon Doped wth Boron, Gallium, and Indium” [L. C. Linares and S. S. Li (pp. 601–608, Vol. 128, No. 3)];Journal of The Electrochemical Society;1981-12-01
3. An Improved Model for Analyzing Hole Mobility and Resistivity in p‐Type Silicon Doped with Boron, Gallium, and Indium;Journal of The Electrochemical Society;1981-03-01
4. Galvanomagnetic effects and scattering mechanism in crystals with non-parabolic bands;Journal of Physics and Chemistry of Solids;1980
5. Classical Transport in Small-Gap Semiconductors;Linear and Nonlinear Electron Transport in Solids;1976
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