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The coupled atom transistor

Published:2015-03-18 Issue:15 Volume:27 Page:154206
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Jehl X,Voisin B,Roche B,Dupont-Ferrier E,De Franceschi S,Sanquer M,Cobian M,Niquet Y-M,Sklénard B,Cueto O,Wacquez R,Vinet M

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/27/i=15/a=154206/pdf

Reference44 articles.

1. Background charges and quantum effects in quantum dots transport spectroscopy

2. A single-atom transistor

3. Individual charge traps in silicon nanowires

4. Single-dopant resonance in a single-electron transistor

5. Orbital Stark effect and quantum confinement transition of donors in silicon

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nonadiabatic Landau–Zener–Stückelberg–Majorana transitions, dynamics, and interference;Physics Reports;2023-01

2. Extended Hubbard model for mesoscopic transport in donor arrays in silicon;Physical Review B;2017-12-11

3. Single dopants in semiconductors;Journal of Physics: Condensed Matter;2015-03-18

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