Effect of the cap layer growth temperature on the Sb distribution in InAs/InSb/InAs sub-monolayer heterostructures for mid-infrared devices-Reference-Cited by-同舟云学术

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Effect of the cap layer growth temperature on the Sb distribution in InAs/InSb/InAs sub-monolayer heterostructures for mid-infrared devices

Published:2019-12-16 Issue:10 Volume:31 Page:105702
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Khan Atif A^ORCID,Repiso E^ORCID,Herrera M^ORCID,Carrington P J^ORCID,de la Mata M^ORCID,Pizarro J^ORCID,Krier A^ORCID,Molina S I^ORCID

Funder

Junta de Andalucía

UE-FEDER

Spanish MINECO

European Union (UE) (post graduate research on dilute metamorphic nanostructures and metamaterials in semiconductor photonics (PROMIS) Horizon 2020 initial training network

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

https://iopscience.iop.org/article/10.1088/1361-6528/ab59f8/pdf

Reference45 articles.

1. Submonolayer Quantum Dots for Optoelectronic Devices

2. Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots

3. Zur Theorie der orientierten Ausscheidung von Ionenkristallen aufeinander

4. Self-Organized Quantum Wires and Dots in III - V semiconductors

5. Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth and characterization of InAs/InP0.69Sb0.31 superlattice by MOCVD;Journal of Crystal Growth;2022-10

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