Investigation of the Transverse Spread of Neodymium Ions Implanted in SOI-Reference-Cited by-同舟云学术

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Investigation of the Transverse Spread of Neodymium Ions Implanted in SOI

Published:2017-12 Issue: Volume:281 Page:012044
ISSN:1757-8981
Container-title:IOP Conference Series: Materials Science and Engineering
language:
Short-container-title:IOP Conf. Ser.: Mater. Sci. Eng.

Author:

Qin X F,Chen L,Xu F Y

Publisher

IOP Publishing

Subject

General Medicine

Link

http://stacks.iop.org/1757-899X/281/i=1/a=012044/pdf

Reference18 articles.

1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon

2. 1.5μm luminescence characteristic of erbium in B, P doped a-SiO:H films

3. A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er 3+ ions

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