The analysis of fabricated silicon nanowires with various techniques: a roadmap to energy saving world

Abstract

Abstract The fabrication of silicon nanowire has been reported in our research study. The synthesis of functionalized-silicon nanowire (f-SiNWs) array which is currently an intense subject of research with its various vast technological applications. We are presenting here SiNW arrays having various applications in electronic and optical devices which were fabricated by a metal-assisted chemical etching (MACE) of silicon (100) wafers. The varying parameter we have taken for the SiNW growth is its etching duration. Analysis of various deposition parameters has been carried out to optimize the growth of SiNW. Surface morphology of etched Si wafer has been carried out by field effect scanning electron microscopy, Photoluminescence (PL) spectroscopy and XRD. For energy saving world the basic stepping stone is Si based nano regime which is emerging vastly on the basis of silicon nanowire. By analyzing the results we reach in the conclusions that with SiNW we will lead to the energy saving era.