Germanium epitaxy on silicon-Reference-Cited by-同舟云学术

Germanium epitaxy on silicon

Published:2014-03-18 Issue:2 Volume:15 Page:024601
ISSN:1468-6996
Container-title:Science and Technology of Advanced Materials
language:en
Short-container-title:Science and Technology of Advanced Materials

Author:

Ye Hui¹,Yu Jinzhong²

Affiliation:

1. State Key Laboratory of Modern Optical Instrumentation, Department of Optical Engineering, Zhejiang University, Hangzhou, 310027, People’s Republic of China

2. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People’s Republic of China

Publisher

Informa UK Limited

Subject

General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1088/1468-6996/15/2/024601

Reference50 articles.

1. Germanium: Epitaxy and its applications

2. Si/Ge nanostructures

3. Si/SiGe heterostructures: from material and physics to devices and circuits

4. High-performance Ge-on-Si photodetectors

Cited by 104 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural changes in Ge1−xSnx and Si1−x−yGeySnx thin films on SOI substrates treated by pulse laser annealing;Journal of Applied Physics;2024-08-05

2. Mechanism and experimental study of photoelectro-Fenton composite magnetorheological polishing;Ceramics International;2024-07

3. Surface-normal illuminated pseudo-planar Ge-on-Si avalanche photodiodes with high gain and low noise;Optics Express;2024-05-13

4. Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate;Journal of Physics D: Applied Physics;2024-03-28

5. On-Chip Lasers for Silicon Photonics;Photonics;2024-02-27