Characterization of a GaAs/GaAsBi pin solar cell
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/ab23ab/pdf
Reference23 articles.
1. The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing
2. Bandgap and optical absorption edge of GaAs1−xBix alloys with 0 < x < 17.8%
3. MBE growth optimization for GaAs1−xBixand dependence of photoluminescence on growth temperature
4. Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell
5. Temperature dependence of hole mobility in GaAs1−xBix alloys
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