Abstract
Abstract
The contribution of facet defect currents to the overall generation-recombination current of laser diodes operating near 800 nm is quantified experimentally, using the dependence of current on cavity length to isolate facet effects. The results show that facet currents exhibit an ideality factor much greater than 2, while currents associated with the interior of the laser diode stripes exhibit an ideality factor of 2. These differences in behavior provide an approach to infer additional details of defect evolution in aging studies of semiconductor laser diodes.
Funder
U.S. Department of Energy
Laboratory Directed Research and Development
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献