Abstract
Abstract
Current crowding is the main bottleneck preventing the prosperity of AlGaN-based deep-ultraviolet light-emitting-diodes (DUV-LEDs) considering the low electrical conductivity of p-type contact layer. A deeper understanding of the current distribution in p-AlGaN is critical, which enables the rational design of advanced device architectures. In this work, a fish-bone-shaped p-type electrode was deposited on top of a 280 nm AlGaN DUV-LED for investigation of localized emissions. A significantly raised junction temperature was identified, causing efficiency droop in DUV-LEDs under relatively low injection current with fish-bone-shaped p-type electrodes. High junction temperature is attributed to the significantly high localized current density which is confirmed by the spatial-resolved electroluminescence spectra and theoretical simulation. The crowding current level beneath the p-electrodes is estimated to be several times higher than that in between the electrodes.
Funder
National Natural Science Foundation of China
Zhejiang Provincial Natural Science Foundation of China
Research and Development Program of Zhejiang Province
Youth Innovation Promotion Association of the Chinese Academy of Sciences
Ningbo Innovation 2025 Major Project
Natural Science Foundation of Ningbo
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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