Source-all-around tunnel field-effect transistor (SAA-TFET): proposal and design
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ab5d86/pdf
Reference49 articles.
1. Quantum Tunneling
2. Mathematical modeling insight of hetero gate dielectric-dual material gate-GAA-tunnel FET for VLSI/analog applications
3. Hetero-Gate-Dielectric Tunneling Field-Effect Transistors
4. Effect of Pocket Doping and Annealing Schemes on the Source-Pocket Tunnel Field-Effect Transistor
5. Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure
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