Review of Modern Field Effect Transistor Technologies for Scaling

Author:

Zhang Shubo

Abstract

Abstract This paper mainly reviews the field-effect transistor technology most involved in the modern electronics industry. Short channel effect promotes the continuous update of the field effect transistor structure. Therefore, the principle and influence of the short channel effect is first introduced. This paper focuses on the development history and current status of fin structure and gate-all-around field effect transistors, as well as their respective technical difficulties. By reviewing these two main technologies, the development process and technical difficulties of the technology are basically clarified. At the same time, the applications of these technologies in the enterprise are introduced. And finally, the future development trend of the technology is proposed.

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference27 articles.

1. Short-channel effects in SOI MOSFETs;Veeraraghavan;IEEE Transactions on Electron Devices,1989

2. Short-channel effects in MOSFETs;D’Agostino;Introduction to VLSI design (EECS 467),2000

3. Threshold voltage in short-channel MOS devices;Viswanathan;IEEE transactions on electron devices,1985

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