High performance nonvolatile memory using SiO2/SiOx/SiOxNystack on excimer laser-annealed polysilicon and the effect of blocking thickness on operation voltage-Reference-Cited by-同舟云学术

High performance nonvolatile memory using SiO2/SiOx/SiOxNystack on excimer laser-annealed polysilicon and the effect of blocking thickness on operation voltage

Published:2010-02-02 Issue:7 Volume:43 Page:075101
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Van Duy Nguyen,Jung Sungwook,Kim Kwangryul,Son Dang Ngoc,Nga Nguyen Thanh,Cho Jaehyun,Choi Byoungdeog,Yi Junsin

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Embedded LTPS flash cells with oxide–nitride–oxynitride stack structure for realization of multi-function mobile flat panel displays

2. Characterization of MONOS nonvolatile memory by solid phase crystallization on glass

3. Embedded TFT nand-Type Nonvolatile Memory in Panel

4. Electronic and structural properties of plasma-deposited a-Si:O:H - The story of O2

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