N incorporation and optical properties of GaAsN epilayers on (3 1 1)A/B GaAs substrates-Reference-Cited by-同舟云学术

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N incorporation and optical properties of GaAsN epilayers on (3 1 1)A/B GaAs substrates

Published:2010-12-09 Issue:1 Volume:44 Page:015402
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Han Xiuxun,Suzuki Hidetoshi,Lee Jong-Han,Kojima Nobuaki,Ohshita Yoshio,Yamaguchi Masafumi

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Breakeven criteria for the GaInNAs junction in GaInP/GaAs/GaInNAs/Ge four-junction solar cells

2. Deep levels in p-type InGaAsN lattice matched to GaAs

3. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

4. Orientation dependent amphoteric behavior of group IV impurities in the molecular beam epitaxial and vapor phase epitaxial growth of GaAs

5. Nitrogen incorporation into strained (In, Ga) (As, N) thin films grown on (100), (511), (411), (311), and (111) GaAs substrates studied by photoreflectance spectroscopy and high-resolution x-ray diffraction

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2. A Brief Review of High Efficiency III-V Solar Cells for Space Application;Frontiers in Physics;2021-02-02

3. Strained-layer quantum well materials grown by MOCVD for diode laser application;Progress in Quantum Electronics;2021-01

4. Optical properties of GaAs1−xBix/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates;Semiconductor Science and Technology;2018-11-13

5. Formation energies of substitutional NAs and split interstitial complexes in dilute GaAsN alloys with different growth orientations;Applied Physics A;2018-01-10

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