Lattice tilt and relaxation in InGaP/GaAs/Ge solar cells on miscut substrates
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/32/i=10A/a=304/pdf
Reference15 articles.
1. Structure of vapor‐deposited GaxIn1−xAs crystals
2. Misorientation and tetragonal distortion in heteroepitaxial vapor-Grown III–V structures
3. Crystallographic tilting of heteroepitaxial layers
4. Tilting of lattice planes in InP epilayers grown on miscut GaAs substrates: the effect of initial growth conditions
5. A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell
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1. Structural Analysis of InAs1−xSbx Epilayer Considering Occurrence of Crystallographic Tilt Exploiting High-Resolution X-Ray Diffraction;Electronic Materials Letters;2021-12-29
2. Strain Analysis of CdTe on InSb Epitaxial Structures Using X-ray-Based Reciprocal Space Measurements and Dynamical Diffraction Simulations;Journal of Electronic Materials;2018-08-10
3. Rotation of in-plane structural anisotropy at the interface of an a-plane InN/GaN heterostructure grown by MOCVD on r-plane sapphire;CrystEngComm;2016
4. Effect of vicinal off-cut substrates on the basal stacking fault density in nonpolar a-GaN epilayers;Journal of Crystal Growth;2011-08
5. Laboratory-based characterization of heteroepitaxial structures: Advanced experiments not needing synchrotron radiation;Powder Diffraction;2010-06
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