Abstract
Abstract
This study investigates nanobeam cavities on a GaAs-on-insulator (GaAsOI) chip with InAs quantum dots (QDs), including design, fabrication, and experimental characterization. The nanobeam cavities are optimized for high photon coupling efficiency and pronounced light-matter interaction. Numerical studies yield Q factors up to about 1400, a coupling efficiency of nearly 70
%
and a maximum Purcell factor of approximately 100. Experimentally, these devices have a Q factor of about 1300, and comparing the lifetime of QDs in on-resonance and off-resonance conditions, a Purcell factor of
10.46
±
0.14
is obtained. Moreover, in the single-emitter regime, we observe strong multiphoton suppression with
g
(
2
)
(
0
)
=
0.297
. Our results demonstrate the high potential of nanobeam cavities on a GaAsOI platform for quantum photonic applications.
Funder
Deutsche Forschungsgemeinschaft
Independent Research Fundation Denmark
H2020 European Research Council
H2020 Marie Skłodowska-Curie Actions
National Key Technologies R&D Program of China
National Natural Science Foundation of China
Einstein Stiftung Berlin