Determination of interface states and their time constant for Au/SnO<sub>2</sub>/n-Si (MOS) capacitors using admittance measurements-Reference-Cited by-同舟云学术

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Determination of interface states and their time constant for Au/SnO₂/n-Si (MOS) capacitors using admittance measurements

Published:2013-04 Issue:4 Volume:22 Page:047303
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Baran H. M.,Tataroğlu A.

Publisher

IOP Publishing

Link

http://stacks.iop.org/1674-1056/22/i=4/a=047303/pdf

Reference30 articles.

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