Diamond-based electron emission: Structure, properties and mechanisms

Abstract

Abstract Diamond has an ultrawide bandgap with excellent physical properties, such as high critical electric field, excellent thermal conductivity, high carrier mobility, etc. Diamond with a hydrogen-terminated (H-terminated) surface has a negative electron affinity (NEA) and can easily produce surface electrons from valence or trapped electrons via optical absorption, thermal heating energy or carrier transport in a PN junction. The NEA of the H-terminated surface enables surface electrons to emit with high efficiency into the vacuum without encountering additional barriers and promotes further development and application of diamond-based emitting devices. This article reviews the electron emission properties of H-terminated diamond surfaces exhibiting NEA characteristics. The electron emission is induced by different physical mechanisms. Recent advancements in electron-emitting devices based on diamond are also summarized. Finally, the current challenges and future development opportunities are discussed to further develop the relevant applications of diamond-based electron-emitting devices.