Author:
Guan 关 Zhao 赵,Wang 王 Tao 陶,Zheng 郑 Yunzhe 赟喆,Peng 彭 Yue 悦,Wei 魏 Luqi 鹿奇,Zhang 张 Yuke 宇科,Mattursun 阿 Abliz 卜力孜.麦提图尔荪,Huang 黄 Jiahao 家豪,Tong 童 Wen-Yi 文旖,Han 韩 Genquan 根全,Chen 陈 Binbin 斌斌,Xiang 向 Ping-Hua 平华,Duan 段 Chun-Gang 纯刚,Zhong 钟 Ni 妮
Abstract
Abstract
Hafnium zirconium oxides (HZO), which exhibit ferroelectric properties, are promising materials for nanoscale device fabrication due to their high complementary metal–oxide–semiconductor (CMOS) compatibility. In addition to piezoelectricity, ferroelectricity, and flexoelectricity, this study reports the observation of ferroelasticity using piezoelectric force microscopy (PFM) and scanning transmission electron microscopy (STEM). The dynamics of 90° ferroelastic domains in HZO thin films are investigated under the influence of an electric field. Switching of the retentive domains is observed through repeated wake-up measurements. This study presents a possibility of enhancing polarization in HZO thin films during wake-up processes.