Author:
Li Ruo-Han,Fei Wu-Xiong,Tang Rui,Wu Zhao-Xi,Duan Chao,Zhang Tao,Zhu Dan,Zhang Wei-Hang,Zhao Sheng-Lei,Zhang Jin-Cheng,Hao Yue
Abstract
The threshold voltage (V
th) of the p-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) is investigated via Silvaco-Atlas simulations. The main factors which influence the threshold voltage of p-channel GaN MOSFETs are barrier height Φ
1,p, polarization charge density σ
b, and equivalent unite capacitance C
oc. It is found that the thinner thickness of p-GaN layer and oxide layer will acquire the more negative threshold voltage V
th, and threshold voltage |V
th| increases with the reduction in p-GaN doping concentration and the work-function of gate metal. Meanwhile, the increase in gate dielectric relative permittivity may cause the increase in threshold voltage |V
th|. Additionally, the parameter influencing output current most is the p-GaN doping concentration, and the maximum current density is 9.5 mA/mm with p-type doping concentration of 9.5 × 1016 cm−3 at V
GS = –12 V and V
DS = –10 V.
Subject
General Physics and Astronomy
Cited by
3 articles.
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