Abstract
Abstract15 MeV proton irradiation of vertical geometry NiO/β-Ga2O3heterojunction rectifiers produced reductions in reverse breakdown voltage from 4.3 kV to 3.7 kV for a fluence of 1013ions·cm−2and 1.93 kV for 1014ions·cm−2. The forward current density was also decreased by 1–2 orders of magnitude under these conditions, with associated increase in on-state resistanceRON. These changes are due to a reduction in carrier density and mobility in the drift region. The reverse leakage current increased by a factor of ∼2 for the higher fluence. Subsequent annealing up to 400 °C further increased reverse leakage due to deterioration of the contacts, but the initial carrier density of 2.2 × 1016cm−3was almost fully restored by this annealing in the lower fluence samples and by more than 50% in the 1014cm−2irradiated devices. Carrier removal rates in the Ga2O3were in the range 190–1200 for the fluence range employed, similar to Schottky rectifiers without the NiO.
Funder
Defense Acquisition Program Administration
Korea Research Institute
NSF
the Department of the Defense, Defense Threat Reduction Agency
Korean government
The Competency Development Program for Industry Specialist
Korea Institute for Advancement of Technology
K-Sensor Development Program
National Research Foundation of Korea
MOTIE, Korea
Ministry of Trade, Industry and Energy
Institute of Civil Military Technology
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics