Methods for synthesizing β-Ga2O3 thin films beyond epitaxy

Abstract

Abstract Gallium oxide is an exceptional ultra-wide bandgap material. Its most stable phase, β-Ga2O3, has been extensively studied and recently attracted much attention for various applications in electronics and optoelectronics. Recent research interest has also arisen in the study of two-dimensional β-Ga2O3, which might promise superior electrical, optical, thermal, and mechanical properties due to quantum confinement, high surface to volume ratio, and ease of integration with other materials. This work reviews and discusses facile, versatile, and economic methods such as exfoliation, spray pyrolysis, and oxide printing to produce few-nanometer thin β-Ga2O3 films. Optical properties and applications in optoelectronic devices are particularly highlighted, along with possible directions for future research.