CCQM-K32 key comparison and P84 pilot study: Amount of silicon oxide as a thickness of SiO2on Si-Reference-Cited by-同舟云学术

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CCQM-K32 key comparison and P84 pilot study: Amount of silicon oxide as a thickness of SiO2on Si

Published:2008-01 Issue:1A Volume:45 Page:08013-08013
ISSN:1681-7575
Container-title:Metrologia
language:
Short-container-title:Metrologia

Author:

Seah M P

Publisher

IOP Publishing

Subject

General Engineering

Link

http://stacks.iop.org/0026-1394/45/i=1A/a=08013/pdf

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Surface Analysis Working Group at the Consultative Committee for Amount of Substance, Metrology in Chemistry and Biology : A successful initiative by Martin Seah;Surface and Interface Analysis;2021-11-07

2. Uncertainty in the mutual calibration method for the traceable thickness measurement of ultra-thin oxide films;Metrologia;2021-04-09

3. Effect of the surface contamination layer on the thickness measurement of ultra-thin HfO2 films;Applied Surface Science;2021-04

4. Measurement of layer thicknesses with an improved optimization method for depolarizing Mueller matrices;Measurement Science and Technology;2020-08-27

5. Development of x-ray reflectivity measurement system under N2 to prevent surface contamination;Review of Scientific Instruments;2020-07-01

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