A reliable method for the counting and control of single ions for single-dopant controlled devices
Author:
Publisher
IOP Publishing
Link
http://stacks.iop.org/0957-4484/19/i=34/a=345202/pdf
Reference28 articles.
1. Transport news
2. The effect of randomness in the distribution of impurity atoms on FET thresholds
3. Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's
Cited by 45 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Statistical analysis of displacement damage in small devices from neutron and ion irradiation;Journal of Applied Physics;2024-11-25
2. Donor-based qubits for quantum computing in silicon;Applied Physics Reviews;2021-09-01
3. Error Rates in Deterministic Ion Implantation for Qubit Arrays;physica status solidi (b);2021-03-19
4. Real-time dose control for electron-beam lithography;Nanotechnology;2020-12-08
5. Single Ion Implantation of Bismuth;physica status solidi (a);2020-08-02
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.7亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2025 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3