An a-C:F:H Film with High-Thermal Stability by Electron Cyclotron Resonance Chemical Vapour Deposition at Room Temperature
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference17 articles.
1. Densified SiOF Film Formation for Preventing Water Absorption
2. FTIR Characterization of Fluorine Doped Silicon Dioxide Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition
3. Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics
4. Changes in structure and nature of defects by annealing of fluorinated amorphous carbon thin films with low dielectric constant
5. Deposition of highly crosslinked fluorinated amorphous carbon film and structural evolution during thermal annealing
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1. Investigations on electrical properties of a-C:H thin films deposited in a Microwave Multipolar Plasma reactor excited at Distributed Electron Cyclotron Resonance;Diamond and Related Materials;2008-07
2. Influence of deposition pressure on the structure and properties of fluorinated diamond-like carbon films prepared by RF reactive magnetron sputtering;Surface and Coatings Technology;2006-03
3. Effect of nitrogen addition on the properties of C:F thin films deposited by RF sputtering;The European Physical Journal Applied Physics;2005-10
4. Optical properties of fluorinated carbon films prepared by inductively coupled plasmas;Thin Solid Films;2005-10
5. Structure evolution of fluorinated diamond-like carbon films prepared at varying source gas flow ratios;Journal of Non-Crystalline Solids;2005-09
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