Simulation of the hydrodynamic model of semiconductor devices by a finite element method-Reference-Cited by-同舟云学术

Simulation of the hydrodynamic model of semiconductor devices by a finite element method

Published:1996-09-01 Issue:3 Volume:15 Page:4-21
ISSN:0332-1649
Container-title:COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
language:en
Short-container-title:

Author:

Fortin Michel,Yang Geng

Abstract

Proposes a finite element method for numerical simulation of the hydrodynamic model of semiconductor devices. Presents some scaling factors and a variational formulation. Uses the P1 ‐ isoP2 element to discretize this formulation and the GMRES (Generalized Minimum RESidual) algorithm to solve the associated non‐linear system. Proposes an artificial viscous term to stabilize the non‐linear system. Gives a choice for an initial solution. Presents the numerical solutions for n+ ‐ n ‐ n+ diodes and 0.25μm gate length Si MESFETs. Calculates a shock wave at 300K. Observes velocity overshoot phenomenon and the effect of heat conduction term.

Publisher

Emerald

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computational Theory and Mathematics,Computer Science Applications

Reference22 articles.

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5. 5.Cook, R.K. and Frey, J., “Two‐dimensional numerical simulation of energy transport effects in Si and GaAs MESFETs”, IEEE Transactions on Electron Devices, Vol. ED‐29, 1982, pp. 970‐7.

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