Author:
Hoon Jian‐Wei,Chan Kah‐Yoong,Tou Teck‐Yong
Abstract
PurposeThe purpose of this paper is to share valuable information about metallization in microelectronic industries by implementing tungsten silicide (WSi) thin film materials.Design/methodology/approachDirect current plasma magnetron sputtering technique was employed for the WSi film growth. Different sputtering parameters were investigated, and the WSi films were characterized using four‐point probe electrical measurement method.FindingsThe experimental results reveal that the sputtering parameters such as deposition pressure and substrate temperature exert significant influence on the electrical properties of the WSi films.Research limitations/implicationsBy tuning the sputtering parameters, the electrical properties of the WSi films can be optimized and the film resistivity can be reduced significantly.Practical implicationsThe investigation results presented in this paper are useful information for microelectronic industries in the area of microelectronic devices metallization.Originality/valueThe fabrication method described in this paper allows fabricating low‐resistivity WSi films by employing a lower deposition pressure and a lower substrate temperature.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Brors, D.L. (1989), “Low resistivity tungsten silicon composite film”, United States Patent, No. 4851295.
2. Carline, R.T., Nayar, V., Robbins, D.J. and Stanaway, M.B. (1998), “Resonant cavity longwave SiGe‐Si photodetector using a buried silicide mirror”, IEEE Photonics Technology Letters, Vol. 10 No. 12, pp. 1775‐7.
3. Chan, K.Y., Tou, T.Y. and Teo, B.S. (2006), “Thickness dependence of the structural and electrical properties of copper films deposited by DC magnetron sputtering technique”, Microelectronics Journal, Vol. 37, pp. 608‐12.
4. Godbole, M. (2001), “Silicon to tungsten ratio determination in tungsten silicide using XRF”, IEEE Xplore, pp. 46‐50.
5. Goh, W.L., Raza, S.H., Montgomery, J.H., Armstrong, B.M. and Gamble, H.S. (1999), “The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers”, IEEE Electron Device Letters, Vol. 20 No. 5, pp. 212‐4.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献